IPW65R041CFDFKSA1 Bileog sonraí
Sonraíochtaí le haghaidh IPW65R041CFDFKSA1
Cuid Uimhir : IPW65R041CFDFKSA1
Monaróir : Infineon Technologies
Tuairisc : MOSFET N CH 650V 68.5A PG-TO247
Sraith : CoolMOS™
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 650V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 68.5A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 41 mOhm @ 33.1A, 10V
Vgs (ú) (Max) @ Id : 4.5V @ 3.3mA
Muirear Geata (Qg) (Max) @ Vgs : 300nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 8400pF @ 100V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 500W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : PG-TO247-3
Pacáiste / Cás : TO-247-3
meáchan : -
coinníoll : Nua agus bunaidh
Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET N CH 650V 68.5A PG-TO247
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
38880 píosaí
Tagairt Praghas
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])
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Gaolmhar le haghaidh IPW65R041CFDFKSA1 Infineon Technologies
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