SI4888DY-T1-GE3 - MOSFET N-CH 30V 11A 8-SOIC

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET N-CH 30V 11A 8-SOIC
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
11528 Pieces
Tagairt Praghas
USD 0
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SI4888DY-T1-GE3 i stoc dhíol.
Roghanna Loingseoireacht agus loingseoireachta am:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Roghanna Íocaíochta:
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Bank Transfer (Wire Transfer)
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Sonraíochtaí le haghaidh SI4888DY-T1-GE3

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : SI4888DY-T1-GE3
Monaróir : Vishay Siliconix
Tuairisc : MOSFET N-CH 30V 11A 8-SOIC
Sraith : TrenchFET®
Stádas Cuid : Obsolete
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 30V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 11A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 7 mOhm @ 16A, 10V
Vgs (ú) (Max) @ Id : 1.6V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 24nC @ 5V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : -
Gné FET : -
Díscaoileadh Cumhachta (Max) : 1.6W (Ta)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : 8-SO
Pacáiste / Cás : 8-SOIC (0.154", 3.90mm Width)
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : SI488 , SI4888D

Doiciméid do SI4888DY-T1-GE3

datasheets : SI4888DY-T1-GE3.pdf

Gaolmhar le haghaidh SI4888DY-T1-GE3 Vishay Siliconix

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