NVD5802NT4G-TB01 - MOSFET N-CH 40V 101A DPAK

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET N-CH 40V 101A DPAK
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
22239 Pieces
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USD 0
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

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Sonraíochtaí le haghaidh NVD5802NT4G-TB01

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : NVD5802NT4G-TB01
Monaróir : ON Semiconductor
Tuairisc : MOSFET N-CH 40V 101A DPAK
Sraith : Automotive, AEC-Q101
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 40V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 16.4A (Ta), 101A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 5V, 10V
Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 50A, 10V
Vgs (ú) (Max) @ Id : 3.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 100nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 5300pF @ 12V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 2.5W (Ta), 93.75W (Tc)
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : DPAK (SINGLE GAUGE)
Pacáiste / Cás : TO-252-3, DPak (2 Leads + Tab), SC-63
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : NVD58 , NVD5802N

Doiciméid do NVD5802NT4G-TB01

datasheets : NVD5802NT4G-TB01.pdf

Gaolmhar le haghaidh NVD5802NT4G-TB01 ON Semiconductor

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