SI3417DV-T1-GE3 - MOSFET P-CH 30V 8A TSOP-6

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET P-CH 30V 8A TSOP-6
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
2862605 Pieces
Tagairt Praghas
USD 0.09801
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SI3417DV-T1-GE3 i stoc dhíol.
Roghanna Loingseoireacht agus loingseoireachta am:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Roghanna Íocaíochta:
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Bank Transfer (Wire Transfer)
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Sonraíochtaí le haghaidh SI3417DV-T1-GE3

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : SI3417DV-T1-GE3
Monaróir : Vishay Siliconix
Tuairisc : MOSFET P-CH 30V 8A TSOP-6
Sraith : TrenchFET®
Stádas Cuid : Active
Cineál FET : P-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 30V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 8A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 25.2 mOhm @ 7.3A, 10V
Vgs (ú) (Max) @ Id : 3V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1350pF @ 15V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 2W (Ta), 4.2W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : 6-TSOP
Pacáiste / Cás : SOT-23-6 Thin, TSOT-23-6
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : SI341 , SI3417D

Doiciméid do SI3417DV-T1-GE3

datasheets : SI3417DV-T1-GE3.pdf

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