IPD65R660CFDAATMA1 - MOSFET N-CH TO252-3
Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET N-CH TO252-3
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
523935 Pieces
Tagairt Praghas
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])
- AX leathsheoltóra ní mór IPD65R660CFDAATMA1 i stoc dhíol.
- Roghanna Loingseoireacht agus loingseoireachta am:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Roghanna Íocaíochta:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Sonraíochtaí le haghaidh IPD65R660CFDAATMA1
Ráthaíocht :
365 lá bharántas
stoc Acmhainní :
Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir :
IPD65R660CFDAATMA1
Monaróir :
Infineon Technologies
Tuairisc :
MOSFET N-CH TO252-3
Sraith :
Automotive, AEC-Q101, CoolMOS™
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
650V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
660 mOhm @ 3.22A, 10V
Vgs (ú) (Max) @ Id :
4.5V @ 214.55µA
Muirear Geata (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
543pF @ 100V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
62.5W (Tc)
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TO252-3
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63
meáchan :
-
coinníoll :
Nua agus bunaidh
Doiciméid do IPD65R660CFDAATMA1
datasheets :
IPD65R660CFDAATMA1.pdf
Gaolmhar le haghaidh IPD65R660CFDAATMA1 Infineon Technologies
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