BSZ110N06NS3GATMA1 - MOSFET N-CH 60V 20A TSDSON-8

Monaróir Cuid Uimhir

BSZ110N06NS3GATMA1

Inmheánach Cuid Uimhir

AX-BSZ110N06NS3GATMA1

Monaróir

Infineon Technologies

Cur Síos Achomair

MOSFET N-CH 60V 20A TSDSON-8

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

1481825 Pieces

Tagairt Praghas

~~USD 0.189336~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór BSZ110N06NS3GATMA1 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh BSZ110N06NS3GATMA1

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : BSZ110N06NS3GATMA1

Monaróir : Infineon Technologies

Tuairisc : MOSFET N-CH 60V 20A TSDSON-8

Sraith : OptiMOS™

Stádas Cuid : Active

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 60V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 20A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 10V

Rds On (Max) @ Id, Vgs : 11 mOhm @ 20A, 10V

Vgs (ú) (Max) @ Id : 4V @ 23µA

Muirear Geata (Qg) (Max) @ Vgs : 33nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 2700pF @ 30V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 2.1W (Ta), 50W (Tc)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : PG-TSDSON-8

Pacáiste / Cás : 8-PowerVDFN

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : BSZ110 , BSZ110N06

Doiciméid do BSZ110N06NS3GATMA1

datasheets : BSZ110N06NS3GATMA1.pdf

Gaolmhar le haghaidh BSZ110N06NS3GATMA1 Infineon Technologies

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