SIR412DP-T1-GE3 - MOSFET N-CH 25V 20A PPAK SO-8

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET N-CH 25V 20A PPAK SO-8
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
63445 Pieces
Tagairt Praghas
USD 0
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SIR412DP-T1-GE3 i stoc dhíol.
Roghanna Loingseoireacht agus loingseoireachta am:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Roghanna Íocaíochta:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Sonraíochtaí le haghaidh SIR412DP-T1-GE3

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : SIR412DP-T1-GE3
Monaróir : Vishay Siliconix
Tuairisc : MOSFET N-CH 25V 20A PPAK SO-8
Sraith : TrenchFET®
Stádas Cuid : Obsolete
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 25V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 20A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 10A, 10V
Vgs (ú) (Max) @ Id : 2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 16nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 600pF @ 10V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 3.9W (Ta), 15.6W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : PowerPAK® SO-8
Pacáiste / Cás : PowerPAK® SO-8
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : SIR41 , SIR412D

Doiciméid do SIR412DP-T1-GE3

datasheets : SIR412DP-T1-GE3.pdf

Gaolmhar le haghaidh SIR412DP-T1-GE3 Vishay Siliconix

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