SCTH90N65G2V-7 - SILICON CARBIDE POWER MOSFET 650
Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
SILICON CARBIDE POWER MOSFET 650
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
15864 Pieces
Tagairt Praghas
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])
- AX leathsheoltóra ní mór SCTH90N65G2V-7 i stoc dhíol.
- Roghanna Loingseoireacht agus loingseoireachta am:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Roghanna Íocaíochta:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Sonraíochtaí le haghaidh SCTH90N65G2V-7
Ráthaíocht :
365 lá bharántas
stoc Acmhainní :
Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir :
SCTH90N65G2V-7
Monaróir :
STMicroelectronics
Tuairisc :
SILICON CARBIDE POWER MOSFET 650
Sraith :
-
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
SiCFET (Silicon Carbide)
Drain to Voltage Source (Vdss) :
650V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
90A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
18V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 50A, 18V
Vgs (ú) (Max) @ Id :
5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
157nC @ 18V
Vgs (Max) :
+22V, -10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
3300pF @ 400V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
330W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
H2PAK-7
Pacáiste / Cás :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
meáchan :
-
coinníoll :
Nua agus bunaidh
Doiciméid do SCTH90N65G2V-7
datasheets :
SCTH90N65G2V-7.pdf
Gaolmhar le haghaidh SCTH90N65G2V-7 STMicroelectronics
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