IPD65R660CFDBTMA1 - MOSFET N-CH 650V 6A TO252

Monaróir Cuid Uimhir

IPD65R660CFDBTMA1

Inmheánach Cuid Uimhir

AX-IPD65R660CFDBTMA1

Monaróir

Infineon Technologies

Cur Síos Achomair

MOSFET N-CH 650V 6A TO252

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

669400 Pieces

Tagairt Praghas

~~USD 0.419124~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór IPD65R660CFDBTMA1 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh IPD65R660CFDBTMA1

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : IPD65R660CFDBTMA1

Monaróir : Infineon Technologies

Tuairisc : MOSFET N-CH 650V 6A TO252

Sraith : CoolMOS™

Stádas Cuid : Not For New Designs

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 650V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 6A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 10V

Rds On (Max) @ Id, Vgs : 660 mOhm @ 2.1A, 10V

Vgs (ú) (Max) @ Id : 4.5V @ 200µA

Muirear Geata (Qg) (Max) @ Vgs : 22nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 615pF @ 100V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 62.5W (Tc)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : PG-TO252-3

Pacáiste / Cás : TO-252-3, DPak (2 Leads + Tab), SC-63

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : IPD65 , IPD65R66

Doiciméid do IPD65R660CFDBTMA1

datasheets : IPD65R660CFDBTMA1.pdf

Gaolmhar le haghaidh IPD65R660CFDBTMA1 Infineon Technologies

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