SQ4949EY-T1_GE3 - MOSFET 2 P-CH 30V 7.5A 8SOIC
Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET 2 P-CH 30V 7.5A 8SOIC
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
561940 Pieces
Tagairt Praghas
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])
- AX leathsheoltóra ní mór SQ4949EY-T1_GE3 i stoc dhíol.
- Roghanna Loingseoireacht agus loingseoireachta am:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Roghanna Íocaíochta:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Sonraíochtaí le haghaidh SQ4949EY-T1_GE3
Ráthaíocht :
365 lá bharántas
stoc Acmhainní :
Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir :
SQ4949EY-T1_GE3
Monaróir :
Vishay Siliconix
Tuairisc :
MOSFET 2 P-CH 30V 7.5A 8SOIC
Sraith :
Automotive, AEC-Q101, TrenchFET®
Stádas Cuid :
Active
Cineál FET :
2 P-Channel (Dual)
Gné FET :
Standard
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
7.5A (Tc)
Rds On (Max) @ Id, Vgs :
35 mOhm @ 5.9A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
30nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1020pF @ 25V
Cumhacht - Max :
3.3W
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SOIC
meáchan :
-
coinníoll :
Nua agus bunaidh
Doiciméid do SQ4949EY-T1_GE3
datasheets :
SQ4949EY-T1_GE3.pdf
Gaolmhar le haghaidh SQ4949EY-T1_GE3 Vishay Siliconix
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