SI5402DC-T1-E3 - MOSFET N-CH 30V 4.9A 1206-8

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET N-CH 30V 4.9A 1206-8
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
11552 Pieces
Tagairt Praghas
USD 0
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SI5402DC-T1-E3 i stoc dhíol.
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Sonraíochtaí le haghaidh SI5402DC-T1-E3

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : SI5402DC-T1-E3
Monaróir : Vishay Siliconix
Tuairisc : MOSFET N-CH 30V 4.9A 1206-8
Sraith : TrenchFET®
Stádas Cuid : Obsolete
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 30V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 4.9A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 35 mOhm @ 4.9A, 10V
Vgs (ú) (Max) @ Id : 1V @ 250µA (Min)
Muirear Geata (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : -
Gné FET : -
Díscaoileadh Cumhachta (Max) : 1.3W (Ta)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : 1206-8 ChipFET™
Pacáiste / Cás : 8-SMD, Flat Lead
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : SI54 , SI5402D

Doiciméid do SI5402DC-T1-E3

datasheets : SI5402DC-T1-E3.pdf

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