RQ3E080GNTB - MOSFET N-CH 30V 8A 8-HSMT

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET N-CH 30V 8A 8-HSMT
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
3778640 Pieces
Tagairt Praghas
USD 0.07425
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór RQ3E080GNTB i stoc dhíol.
Roghanna Loingseoireacht agus loingseoireachta am:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Roghanna Íocaíochta:
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Bank Transfer (Wire Transfer)
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Sonraíochtaí le haghaidh RQ3E080GNTB

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : RQ3E080GNTB
Monaróir : Rohm Semiconductor
Tuairisc : MOSFET N-CH 30V 8A 8-HSMT
Sraith : -
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 30V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 8A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 16.7 mOhm @ 8A, 10V
Vgs (ú) (Max) @ Id : 2.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs : 5.8nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 295pF @ 15V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 2W (Ta), 15W (Tc)
Teocht Oibriúcháin : 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : 8-HSMT (3.2x3)
Pacáiste / Cás : 8-PowerVDFN
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : RQ3 , RQ3E0

Doiciméid do RQ3E080GNTB

datasheets : RQ3E080GNTB.pdf

Gaolmhar le haghaidh RQ3E080GNTB Rohm Semiconductor

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