IPD35N10S3L26ATMA1 - MOSFET N-CH 100V 35A TO252-3

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Cur Síos Achomair
MOSFET N-CH 100V 35A TO252-3
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
991945 Pieces
Tagairt Praghas
USD 0.28284
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór IPD35N10S3L26ATMA1 i stoc dhíol.
Roghanna Loingseoireacht agus loingseoireachta am:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
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Normal Post: 10-15 days.
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Sonraíochtaí le haghaidh IPD35N10S3L26ATMA1

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : IPD35N10S3L26ATMA1
Monaróir : Infineon Technologies
Tuairisc : MOSFET N-CH 100V 35A TO252-3
Sraith : OptiMOS™
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 100V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 35A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 24 mOhm @ 35A, 10V
Vgs (ú) (Max) @ Id : 2.4V @ 39µA
Muirear Geata (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 2700pF @ 25V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 71W (Tc)
Teocht Oibriúcháin : -55°C ~ 175°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : PG-TO252-3-11
Pacáiste / Cás : TO-252-3, DPak (2 Leads + Tab), SC-63
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : IPD35N , IPD35N10S

Doiciméid do IPD35N10S3L26ATMA1

datasheets : IPD35N10S3L26ATMA1.pdf

Gaolmhar le haghaidh IPD35N10S3L26ATMA1 Infineon Technologies

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