SIDR626DP-T1-GE3 - MOSFET N-CHAN 60V

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET N-CHAN 60V
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
343005 Pieces
Tagairt Praghas
USD 0.817938
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SIDR626DP-T1-GE3 i stoc dhíol.
Roghanna Loingseoireacht agus loingseoireachta am:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Roghanna Íocaíochta:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Sonraíochtaí le haghaidh SIDR626DP-T1-GE3

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : SIDR626DP-T1-GE3
Monaróir : Vishay Siliconix
Tuairisc : MOSFET N-CHAN 60V
Sraith : TrenchFET® Gen IV
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 60V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 42.8A (Ta), 100A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 6V, 10V
Rds On (Max) @ Id, Vgs : 1.7 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id : 3.4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 102nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 5130pF @ 30V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 6.25W (Ta), 125W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : PowerPAK® SO-8DC
Pacáiste / Cás : PowerPAK® SO-8
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : SIDR6 , SIDR626D

Doiciméid do SIDR626DP-T1-GE3

datasheets : SIDR626DP-T1-GE3.pdf

Gaolmhar le haghaidh SIDR626DP-T1-GE3 Vishay Siliconix

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