SIHD9N60E-GE3 - MOSFET N-CHANNEL 600V 9A DPAK

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET N-CHANNEL 600V 9A DPAK
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
469025 Pieces
Tagairt Praghas
USD 0.598182
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SIHD9N60E-GE3 i stoc dhíol.
Roghanna Loingseoireacht agus loingseoireachta am:
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FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Roghanna Íocaíochta:
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Sonraíochtaí le haghaidh SIHD9N60E-GE3

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : SIHD9N60E-GE3
Monaróir : Vishay Siliconix
Tuairisc : MOSFET N-CHANNEL 600V 9A DPAK
Sraith : E
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 600V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 9A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 368 mOhm @ 4.5A, 10V
Vgs (ú) (Max) @ Id : 4.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 52nC @ 10V
Vgs (Max) : ±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 778pF @ 100V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 78W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : D-PAK (TO-252AA)
Pacáiste / Cás : TO-252-3, DPak (2 Leads + Tab), SC-63
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : SIHD , SIHD9N

Doiciméid do SIHD9N60E-GE3

datasheets : SIHD9N60E-GE3.pdf

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