SI5457DC-T1-GE3 - MOSFET P-CH 20V 6A CHIPFET
Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET P-CH 20V 6A CHIPFET
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
2072445 Pieces
Tagairt Praghas
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])
- AX leathsheoltóra ní mór SI5457DC-T1-GE3 i stoc dhíol.
- Roghanna Loingseoireacht agus loingseoireachta am:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Roghanna Íocaíochta:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Sonraíochtaí le haghaidh SI5457DC-T1-GE3
Ráthaíocht :
365 lá bharántas
stoc Acmhainní :
Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir :
SI5457DC-T1-GE3
Monaróir :
Vishay Siliconix
Tuairisc :
MOSFET P-CH 20V 6A CHIPFET
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
36 mOhm @ 4.9A, 4.5V
Vgs (ú) (Max) @ Id :
1.4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±12V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1000pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.3W (Ta), 5.7W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
1206-8 ChipFET™
Pacáiste / Cás :
8-SMD, Flat Lead
meáchan :
-
coinníoll :
Nua agus bunaidh
Doiciméid do SI5457DC-T1-GE3
datasheets :
SI5457DC-T1-GE3.pdf
Gaolmhar le haghaidh SI5457DC-T1-GE3 Vishay Siliconix
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