SI5509DC-T1-GE3 - MOSFET N/P-CH 20V 6.1A 1206-8

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET N/P-CH 20V 6.1A 1206-8
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
27818 Pieces
Tagairt Praghas
USD 0
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SI5509DC-T1-GE3 i stoc dhíol.
Roghanna Loingseoireacht agus loingseoireachta am:
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Normal Post: 10-15 days.
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Sonraíochtaí le haghaidh SI5509DC-T1-GE3

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : SI5509DC-T1-GE3
Monaróir : Vishay Siliconix
Tuairisc : MOSFET N/P-CH 20V 6.1A 1206-8
Sraith : TrenchFET®
Stádas Cuid : Obsolete
Cineál FET : N and P-Channel
Gné FET : Logic Level Gate
Drain to Voltage Source (Vdss) : 20V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 6.1A, 4.8A
Rds On (Max) @ Id, Vgs : 52 mOhm @ 5A, 4.5V
Vgs (ú) (Max) @ Id : 2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 6.6nC @ 5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 455pF @ 10V
Cumhacht - Max : 4.5W
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste / Cás : 8-SMD, Flat Lead
Pacáiste Gléas Soláthraithe : 1206-8 ChipFET™
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : SI550 , SI5509D

Doiciméid do SI5509DC-T1-GE3

datasheets : SI5509DC-T1-GE3.pdf

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