FQD19N10TM_F080 - MOSFET N-CH 100V 15.6A DPAK
Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET N-CH 100V 15.6A DPAK
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
7304 Pieces
Tagairt Praghas
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])
- AX leathsheoltóra ní mór FQD19N10TM_F080 i stoc dhíol.
- Roghanna Loingseoireacht agus loingseoireachta am:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Roghanna Íocaíochta:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Sonraíochtaí le haghaidh FQD19N10TM_F080
Ráthaíocht :
365 lá bharántas
stoc Acmhainní :
Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir :
FQD19N10TM_F080
Monaróir :
ON Semiconductor
Tuairisc :
MOSFET N-CH 100V 15.6A DPAK
Sraith :
QFET®
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
15.6A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 7.8A, 10V
Vgs (ú) (Max) @ Id :
4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±25V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
780pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.5W (Ta), 50W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
D-Pak
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63
meáchan :
-
coinníoll :
Nua agus bunaidh
Doiciméid do FQD19N10TM_F080
datasheets :
FQD19N10TM_F080.pdf
Gaolmhar le haghaidh FQD19N10TM_F080 ON Semiconductor
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CAP CER 7000PF 15KV R230 DISK. |
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