NTLJD3182FZTBG - MOSFET P-CH 20V 2.2A 6-WDFN

Monaróir Cuid Uimhir

NTLJD3182FZTBG

Inmheánach Cuid Uimhir

AX-NTLJD3182FZTBG

Monaróir

ON Semiconductor

Cur Síos Achomair

MOSFET P-CH 20V 2.2A 6-WDFN

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

7224 Pieces

Tagairt Praghas

~~USD 0~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

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Sonraíochtaí le haghaidh NTLJD3182FZTBG

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : NTLJD3182FZTBG

Monaróir : ON Semiconductor

Tuairisc : MOSFET P-CH 20V 2.2A 6-WDFN

Sraith : -

Stádas Cuid : Obsolete

Cineál FET : P-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 20V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 2.2A (Ta)

Voltas Céide (Max Rds On, Min Rds Ar) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 100 mOhm @ 2A, 4.5V

Vgs (ú) (Max) @ Id : 1V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 7.8nC @ 4.5V

Vgs (Max) : ±8V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 450pF @ 10V

Gné FET : Schottky Diode (Isolated)

Díscaoileadh Cumhachta (Max) : 710mW (Ta)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : 6-WDFN (2x2)

Pacáiste / Cás : 6-WDFN Exposed Pad

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : NTLJ , NTLJD31

Doiciméid do NTLJD3182FZTBG

datasheets : NTLJD3182FZTBG.pdf

Gaolmhar le haghaidh NTLJD3182FZTBG ON Semiconductor

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