SI5475BDC-T1-GE3 - MOSFET P-CH 12V 6A 1206-8

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET P-CH 12V 6A 1206-8
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
11584 Pieces
Tagairt Praghas
USD 0
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SI5475BDC-T1-GE3 i stoc dhíol.
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Sonraíochtaí le haghaidh SI5475BDC-T1-GE3

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : SI5475BDC-T1-GE3
Monaróir : Vishay Siliconix
Tuairisc : MOSFET P-CH 12V 6A 1206-8
Sraith : TrenchFET®
Stádas Cuid : Obsolete
Cineál FET : P-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 12V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 6A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 28 mOhm @ 5.6A, 4.5V
Vgs (ú) (Max) @ Id : 1V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 40nC @ 8V
Vgs (Max) : ±8V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1400pF @ 6V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 2.5W (Ta), 6.3W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : 1206-8 ChipFET™
Pacáiste / Cás : 8-SMD, Flat Lead
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : SI547 , SI5475BD

Doiciméid do SI5475BDC-T1-GE3

datasheets : SI5475BDC-T1-GE3.pdf

Gaolmhar le haghaidh SI5475BDC-T1-GE3 Vishay Siliconix

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