SI2301CDS-T1-E3 - MOSFET P-CH 20V 3.1A SOT23-3

Monaróir Cuid Uimhir

SI2301CDS-T1-E3

Inmheánach Cuid Uimhir

AX-SI2301CDS-T1-E3

Monaróir

Vishay Siliconix

Cur Síos Achomair

MOSFET P-CH 20V 3.1A SOT23-3

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

4496215 Pieces

Tagairt Praghas

~~USD 0.0624~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SI2301CDS-T1-E3 i stoc dhíol.

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Sonraíochtaí le haghaidh SI2301CDS-T1-E3

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SI2301CDS-T1-E3

Monaróir : Vishay Siliconix

Tuairisc : MOSFET P-CH 20V 3.1A SOT23-3

Sraith : TrenchFET®

Stádas Cuid : Active

Cineál FET : P-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 20V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 3.1A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 112 mOhm @ 2.8A, 4.5V

Vgs (ú) (Max) @ Id : 1V @ 250µA

Muirear Geata (Qg) (Max) @ Vgs : 10nC @ 4.5V

Vgs (Max) : ±8V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 405pF @ 10V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 860mW (Ta), 1.6W (Tc)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : SOT-23-3 (TO-236)

Pacáiste / Cás : TO-236-3, SC-59, SOT-23-3

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SI230 , SI2301C

Doiciméid do SI2301CDS-T1-E3

datasheets : SI2301CDS-T1-E3.pdf

Gaolmhar le haghaidh SI2301CDS-T1-E3 Vishay Siliconix

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