SPB10N10L G - MOSFET N-CH 100V 10.3A TO-263

Monaróir Cuid Uimhir

SPB10N10L G

Inmheánach Cuid Uimhir

AX-SPB10N10L G

Monaróir

Infineon Technologies

Cur Síos Achomair

MOSFET N-CH 100V 10.3A TO-263

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

9246 Pieces

Tagairt Praghas

~~USD 0~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SPB10N10L G i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh SPB10N10L G

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : SPB10N10L G

Monaróir : Infineon Technologies

Tuairisc : MOSFET N-CH 100V 10.3A TO-263

Sraith : SIPMOS®

Stádas Cuid : Discontinued at Digi-Key

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 100V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 10.3A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 10V

Rds On (Max) @ Id, Vgs : 154 mOhm @ 8.1A, 10V

Vgs (ú) (Max) @ Id : 2V @ 21µA

Muirear Geata (Qg) (Max) @ Vgs : 22nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 444pF @ 25V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 50W (Tc)

Teocht Oibriúcháin : -55°C ~ 175°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : PG-TO263-3-2

Pacáiste / Cás : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : SPB , SPB10

Doiciméid do SPB10N10L G

datasheets : SPB10N10L G.pdf

Gaolmhar le haghaidh SPB10N10L G Infineon Technologies

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BZ120055WC16136CB1	Vishay Beyschlag	CAP CER 160PF 9KV AXIAL.