SI4435DDY-T1-E3 - MOSFET P-CH 30V 11.4A 8SOIC

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET P-CH 30V 11.4A 8SOIC
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
1451960 Pieces
Tagairt Praghas
USD 0.19323
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SI4435DDY-T1-E3 i stoc dhíol.
Roghanna Loingseoireacht agus loingseoireachta am:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Roghanna Íocaíochta:
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Sonraíochtaí le haghaidh SI4435DDY-T1-E3

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : SI4435DDY-T1-E3
Monaróir : Vishay Siliconix
Tuairisc : MOSFET P-CH 30V 11.4A 8SOIC
Sraith : TrenchFET®
Stádas Cuid : Active
Cineál FET : P-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 30V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 11.4A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 24 mOhm @ 9.1A, 10V
Vgs (ú) (Max) @ Id : 3V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 50nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1350pF @ 15V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 2.5W (Ta), 5W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : 8-SO
Pacáiste / Cás : 8-SOIC (0.154", 3.90mm Width)
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : SI443 , SI4435D

Doiciméid do SI4435DDY-T1-E3

datasheets : SI4435DDY-T1-E3.pdf

Gaolmhar le haghaidh SI4435DDY-T1-E3 Vishay Siliconix

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