BSP299H6327XUSA1 - MOSFET N-CH 500V 0.4A SOT-223

Monaróir Cuid Uimhir

BSP299H6327XUSA1

Inmheánach Cuid Uimhir

AX-BSP299H6327XUSA1

Monaróir

Infineon Technologies

Cur Síos Achomair

MOSFET N-CH 500V 0.4A SOT-223

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

701045 Pieces

Tagairt Praghas

~~USD 0.400206~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór BSP299H6327XUSA1 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh BSP299H6327XUSA1

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : BSP299H6327XUSA1

Monaróir : Infineon Technologies

Tuairisc : MOSFET N-CH 500V 0.4A SOT-223

Sraith : SIPMOS®

Stádas Cuid : Not For New Designs

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 500V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 400mA (Ta)

Voltas Céide (Max Rds On, Min Rds Ar) : 10V

Rds On (Max) @ Id, Vgs : 4 Ohm @ 400mA, 10V

Vgs (ú) (Max) @ Id : 4V @ 1mA

Muirear Geata (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 400pF @ 25V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 1.8W (Ta)

Teocht Oibriúcháin : -55°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : PG-SOT223-4

Pacáiste / Cás : TO-261-4, TO-261AA

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : BSP29 , BSP299H6

Doiciméid do BSP299H6327XUSA1

datasheets : BSP299H6327XUSA1.pdf

Gaolmhar le haghaidh BSP299H6327XUSA1 Infineon Technologies

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