TPN7R506NH,L1Q - MOSFET N-CH 60V 26A 8TSON

Monaróir Cuid Uimhir

TPN7R506NH,L1Q

Inmheánach Cuid Uimhir

AX-TPN7R506NH,L1Q

Monaróir

Toshiba Semiconductor and Storage

Cur Síos Achomair

MOSFET N-CH 60V 26A 8TSON

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

1246280 Pieces

Tagairt Praghas

~~USD 0.22512~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór TPN7R506NH,L1Q i stoc dhíol.

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Sonraíochtaí le haghaidh TPN7R506NH,L1Q

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : TPN7R506NH,L1Q

Monaróir : Toshiba Semiconductor and Storage

Tuairisc : MOSFET N-CH 60V 26A 8TSON

Sraith : U-MOSVIII-H

Stádas Cuid : Active

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 60V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 26A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 6.5V, 10V

Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 13A, 10V

Vgs (ú) (Max) @ Id : 4V @ 200µA

Muirear Geata (Qg) (Max) @ Vgs : 22nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1800pF @ 30V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 700mW (Ta), 42W (Tc)

Teocht Oibriúcháin : 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : 8-TSON Advance (3.3x3.3)

Pacáiste / Cás : 8-PowerVDFN

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : TPN7 , TPN7R50

Doiciméid do TPN7R506NH,L1Q

datasheets : TPN7R506NH,L1Q.pdf

Gaolmhar le haghaidh TPN7R506NH,L1Q Toshiba Semiconductor and Storage

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