SI5513DC-T1-E3 - MOSFET N/P-CH 20V 3.1A 1206-8

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET N/P-CH 20V 3.1A 1206-8
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
26887 Pieces
Tagairt Praghas
USD 0
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SI5513DC-T1-E3 i stoc dhíol.
Roghanna Loingseoireacht agus loingseoireachta am:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Roghanna Íocaíochta:
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Sonraíochtaí le haghaidh SI5513DC-T1-E3

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : SI5513DC-T1-E3
Monaróir : Vishay Siliconix
Tuairisc : MOSFET N/P-CH 20V 3.1A 1206-8
Sraith : TrenchFET®
Stádas Cuid : Obsolete
Cineál FET : N and P-Channel
Gné FET : Logic Level Gate
Drain to Voltage Source (Vdss) : 20V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 3.1A, 2.1A
Rds On (Max) @ Id, Vgs : 75 mOhm @ 3.1A, 4.5V
Vgs (ú) (Max) @ Id : 1.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 6nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : -
Cumhacht - Max : 1.1W
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste / Cás : 8-SMD, Flat Lead
Pacáiste Gléas Soláthraithe : 1206-8 ChipFET™
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : SI55 , SI5513D

Doiciméid do SI5513DC-T1-E3

datasheets : SI5513DC-T1-E3.pdf

Gaolmhar le haghaidh SI5513DC-T1-E3 Vishay Siliconix

Cuid Uimhir Brand Tuairisc Ceannaigh

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