SI8823EDB-T2-E1 - MOSFET P-CH 20V 2.7A 4-MICROFOOT

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET P-CH 20V 2.7A 4-MICROFOOT
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
3839450 Pieces
Tagairt Praghas
USD 0.073074
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SI8823EDB-T2-E1 i stoc dhíol.
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Sonraíochtaí le haghaidh SI8823EDB-T2-E1

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : SI8823EDB-T2-E1
Monaróir : Vishay Siliconix
Tuairisc : MOSFET P-CH 20V 2.7A 4-MICROFOOT
Sraith : TrenchFET® Gen III
Stádas Cuid : Active
Cineál FET : P-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 20V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 2.7A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 95 mOhm @ 1A, 4.5V
Vgs (ú) (Max) @ Id : 800mV @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 10nC @ 4.5V
Vgs (Max) : ±8V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 580pF @ 10V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 900mW (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : 4-MICRO FOOT® (0.8x0.8)
Pacáiste / Cás : 4-XFBGA
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : SI882 , SI8823E

Doiciméid do SI8823EDB-T2-E1

datasheets : SI8823EDB-T2-E1.pdf

Gaolmhar le haghaidh SI8823EDB-T2-E1 Vishay Siliconix

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