BSB056N10NN3GXUMA1 - MOSFET N-CH 100V 9A WDSON-2

Monaróir Cuid Uimhir

BSB056N10NN3GXUMA1

Inmheánach Cuid Uimhir

AX-BSB056N10NN3GXUMA1

Monaróir

Infineon Technologies

Cur Síos Achomair

MOSFET N-CH 100V 9A WDSON-2

Stádas RoHS

Luaidhe saor in aisce / RoHS comhlíontach

Am seachadta

1-2 lá

Ar fáil Cainníocht

299510 Pieces

Tagairt Praghas

~~USD 0.936714~~

ár Praghas

- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór BSB056N10NN3GXUMA1 i stoc dhíol.

Roghanna Loingseoireacht agus loingseoireachta am:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Roghanna Íocaíochta:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Sonraíochtaí le haghaidh BSB056N10NN3GXUMA1

Ráthaíocht : 365 lá bharántas

stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct

Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Cuid Uimhir : BSB056N10NN3GXUMA1

Monaróir : Infineon Technologies

Tuairisc : MOSFET N-CH 100V 9A WDSON-2

Sraith : OptiMOS™

Stádas Cuid : Active

Cineál FET : N-Channel

Teicneolaíocht : MOSFET (Metal Oxide)

Drain to Voltage Source (Vdss) : 100V

Reatha - Leanúnach Drain (Id) @ 25 ° C : 9A (Ta), 83A (Tc)

Voltas Céide (Max Rds On, Min Rds Ar) : 6V, 10V

Rds On (Max) @ Id, Vgs : 5.6 mOhm @ 30A, 10V

Vgs (ú) (Max) @ Id : 3.5V @ 100µA

Muirear Geata (Qg) (Max) @ Vgs : 74nC @ 10V

Vgs (Max) : ±20V

Toilleadh Ionchuir (Ciss) (Max) @ Vds : 5500pF @ 50V

Gné FET : -

Díscaoileadh Cumhachta (Max) : 2.8W (Ta), 78W (Tc)

Teocht Oibriúcháin : -40°C ~ 150°C (TJ)

Cineál Gléasta : Surface Mount

Pacáiste Gléas Soláthraithe : MG-WDSON-2, CanPAK M™

Pacáiste / Cás : 3-WDSON

meáchan : -

coinníoll : Nua agus bunaidh

Naisc ghaolmhara : BSB056 , BSB056N10

Doiciméid do BSB056N10NN3GXUMA1

datasheets : BSB056N10NN3GXUMA1.pdf

Gaolmhar le haghaidh BSB056N10NN3GXUMA1 Infineon Technologies

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