SI8425DB-T1-E1 - MOSFET P-CH 20V MICROFOOT

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Monaróir
Cur Síos Achomair
MOSFET P-CH 20V MICROFOOT
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
1839160 Pieces
Tagairt Praghas
USD 0.15255
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór SI8425DB-T1-E1 i stoc dhíol.
Roghanna Loingseoireacht agus loingseoireachta am:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Roghanna Íocaíochta:
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Bank Transfer (Wire Transfer)
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Sonraíochtaí le haghaidh SI8425DB-T1-E1

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : SI8425DB-T1-E1
Monaróir : Vishay Siliconix
Tuairisc : MOSFET P-CH 20V MICROFOOT
Sraith : TrenchFET®
Stádas Cuid : Active
Cineál FET : P-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 20V
Reatha - Leanúnach Drain (Id) @ 25 ° C : -
Voltas Céide (Max Rds On, Min Rds Ar) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 23 mOhm @ 2A, 4.5V
Vgs (ú) (Max) @ Id : 900mV @ 250µA
Muirear Geata (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 2800pF @ 10V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 1.1W (Ta), 2.7W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : 4-WLCSP (1.6x1.6)
Pacáiste / Cás : 4-UFBGA, WLCSP
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : SI84 , SI8425D

Doiciméid do SI8425DB-T1-E1

datasheets : SI8425DB-T1-E1.pdf

Gaolmhar le haghaidh SI8425DB-T1-E1 Vishay Siliconix

Cuid Uimhir Brand Tuairisc Ceannaigh

12065C223KHT1A

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