BSP297H6327XTSA1 - MOSFET N-CH 200V 660MA SOT-223

Monaróir Cuid Uimhir
Inmheánach Cuid Uimhir
Cur Síos Achomair
MOSFET N-CH 200V 660MA SOT-223
Stádas RoHS
Luaidhe saor in aisce / RoHS comhlíontach
Am seachadta
1-2 lá
Ar fáil Cainníocht
1128445 Pieces
Tagairt Praghas
USD 0.248628
ár Praghas
- (Téigh i dteagmháil linn le haghaidh ar phraghas níos fearr: [email protected])

AX leathsheoltóra ní mór BSP297H6327XTSA1 i stoc dhíol.
Roghanna Loingseoireacht agus loingseoireachta am:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Roghanna Íocaíochta:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Sonraíochtaí le haghaidh BSP297H6327XTSA1

Ráthaíocht : 365 lá bharántas
stoc Acmhainní : Franchised Dáileoir / Manufacturer Direct
Tír thionscnaimh : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Cuid Uimhir : BSP297H6327XTSA1
Monaróir : Infineon Technologies
Tuairisc : MOSFET N-CH 200V 660MA SOT-223
Sraith : SIPMOS®
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 200V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 660mA (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.8 Ohm @ 660mA, 10V
Vgs (ú) (Max) @ Id : 1.8V @ 400µA
Muirear Geata (Qg) (Max) @ Vgs : 16.1nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 357pF @ 25V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 1.8W (Ta)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : PG-SOT223-4
Pacáiste / Cás : TO-261-4, TO-261AA
meáchan : -
coinníoll : Nua agus bunaidh
Naisc ghaolmhara : BSP29 , BSP297H6

Doiciméid do BSP297H6327XTSA1

datasheets : BSP297H6327XTSA1.pdf

Gaolmhar le haghaidh BSP297H6327XTSA1 Infineon Technologies

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